- Morphology and surface properties of semiconductors structures, focusing in particular on some wide gap semiconductors. The analysis techniques used are:
- ▪ Scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDX, cathodoluminescence spectroscopy),
▪ Auger electron spectroscopy (AES), low-energy electron diffraction (LEED). - Research on magnetic and electronic structure with element and electron shell specificity, based on the use of x-rays for core level excitation using synchrotron radiation. The electronic structure is investigated by means of x-ray absorption and photoemission spectroscopies (XAS, XPS), the magnetic properties are studied by XMCD and XLMD as well as the element specific real space and magnetic topography are recorded by means of PEEM microscopy. Typical investigations:
- ▪ Magnetic thin films and nanostructures containing transition metals (Fe, Co, Mn), rare earths (Eu, Ce) and p-block heavy metals (Bi, Sb) deposited on the surface of a semiconductor or built within the lattice (GaN, ZnO),
▪ Chiral organic molecular layers investigated for spintronic applications. Their spin filtering effects and electronic structure are investigated by spin-resolved photoemission and XNCD spectroscopy. - Investigations of the band structure of semiconducting crystals and structures:
- ▪ IV-VI semiconductors, group III nitrides, semiconductors doped with transition metals or rare earth elements,
▪ Shallow level photoelectron spectroscopy with use of synchrotron radiation in the UV and X-ray photon spectral ranges (angle-resolved or resonant spectroscopy).