 | INSTITUTE OF PHYSICS PAS |
DIVISION OF PHYSICS AND TECHNOLOGY OF WIDE-BAND-GAP
SEMICONDUCTOR NANOSTRUCTURES - ON4
Head of the division: prof. dr hab. Bogdan Kowalski, professor kowab@ifpan.edu.pl
Deputy head of the division: prof. dr hab. Marek Godlewski, professor godlew@ifpan.edu.pl
Secretary: mgr Anna Drzazga adrzazga@ifpan.edu.pl
Phone: (+48-22) 843 70 01 or 843 66 01 ext.2911, 3380;
| ON4.1 | Group of High-Pressure Spectroscopy |
| ON4.2 | Group of Technology of Oxide Nanostuctures |
| ON4.4 | Group of Electron Microscopy and Electron Spectroscopy |
| ON4.5 | Group of MBE Growth of Nitride Nanostructures |
- Energy transfer, radiative and nonradiative recombination processes in bulk and thin films materials
- Physics of spin interactions in semimagnetic semiconductors and layers
- Energy structure and recombination processes of deep-level defects in semiconductors and insulators
- Growth and characterization of bulk and epitaxial II-VI and III-V compounds
- Band structure and surface studies by photoemission spectroscopy
- High-temperature superconductivity
- Theory of disordered systems
- AIIIBV compounds (epitaxial GaAlAs/GaAs, bulk InP, GaSb, InAsP - pure and doped)
- Thin layers of AIIBIV compounds (including semimagnetic semiconductors, mostly doped)
- Czochralski grown Si - RE implanted
- High temperature superconductors - thin films
[ IP PAS ] [ Scientific Divisions ]