INSTITUTE  OF  PHYSICS  PAS

DIVISION OF PHYSICS OF SEMICONDUCTORS - ON1

Head of the division: dr hab. Andrzej Łusakowski, prof. IP PAS lusak@ifpan.edu.pl Deputy head of the division: Dr. hab. Izabela Kuryliszyn-Kudelska kuryl@ifpan.edu.pl Secretary: mgr Katarzyna Duszyńska kduszyn@ifpan.edu.pl Phone: (+48) 22 843 56 26, (+48) 22 116 26 01

ON1.1 Group of physics of AIIBVI semiconductors ON1.2 Group of physics and technology of epitaxial layers ON1.3 Group of physics of semimagnetic semiconductors

Main subject of research: Experimental and theoretical studies of magnetic, thermal, optical, transport and magnetotransport properties of bulk crystals and thin layers of II-VI, IV-VI and III-V semimagnetic (diluted magnetic) semiconductors. Experimental studies of magnetic, optical and electron transport phenomena in semiconductor multilayer quantum structures based on Eu (or Mn) chalcogenides and IV-VI (or II-VI) semiconductors. Crystal growth: Crystal growth of II-VI and IV-VI semimagnetic semiconductors with Mn, Eu and Gd (standard Bridgman and high pressure Bridgman techniques) e.g. CdMnTe, ZnMnTe (also heavily p-type doped with P) Growth of monocrystals of substrate quality IV-VI (PbS, PbSe, PbTe) and II-VI (ZnTe, CdMnTe, CdZnTe) semiconductors employing physical vapor transport method. Growth of ZnO and ZnO:Mn monocrystals employing chemical vapor transport method. MBE growth of IV-VI semimagnetic semiconductors with Mn, Eu and Gd, e.g. PbMnTe, SnGdTe, SnMnTe and (Eu,Gd)Te-PbTe heterostructures

Major experimental and technological facilities: Lake-shore susceptometer-magnetometr system (temperature range 1.3-300K, magnetic field up to 9T). Magnetotransport set-ups (temperature range 1.5-300K, magnetic field up to 13T). Specific heat measurements set-up (temperature range 0.4-50K, magnetic field up to 6T). Photoluminescence set-up for visible and middle infrared range with YAG laser. Magnetooptical Kerr magnetometer (temperature range 1.5-300K, magnetic field up to 0.2T). Energy dispersive X-ray fluorescence analyzer for chemical analysis. Various technological facilities for the growth of bulk crystals of II-VI and IV-VI semiconductors by Bridgman method and by physical transport method. Technological facilities for the purification of Mn. Mg , Te, Cd and other metals and nonmetals relevant to semiconductor technology. Home-built MBE facility for the growth of layers of IV-VI semiconductors with Mn, Eu and Gd.

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