|
1 |
H. Przybylinska, W. Jantsch, A. Kozanecki, D.J. As,
K. Lischka Photoluminescence Excitation Mechanisms of Er in GaN |
|
2 |
B. J. Kowalski, R. J. Iwanowski, K. Kopalko, B.A. Orlowski, L. Plucinski, R. L. Johnson, J. Ghijsen, F. Mirabella, N. Barrett, I. Grzegory, S. Porowski Photoemission and LEED Study of GaN(0001)(1x1)(N-Polar) Surface
Composition and Atomic Structure |
|
3 |
A. Golnik, C.
Bernhard, T. Holden, I. Grzegory, T. Suski Anisotropy of Dielectric Function in Insulating GaN Crystals Studied
by FIR Ellipsometry |
|
4 |
P. Trautman, K. Pakula, J.M. Baranowski Optical Reflectance Due to Excitons in Schottky Barrier Diode on
n-type GaN |
|
5 |
M. Sobol, W. Bardyszewski Theory of Magnetooptical Properties of Excitons in GaN |
|
6 |
V.A. Vekshin, V.N.
Jmerik, V.Yu. Davydov, V.V. Ratnikov, M.G. Tkachman, T.V. Shubina, S.V.
Ivanov Growth of III-Nitrides by Plasma-Assisted Molecular Beam Epitaxy with
Optically Controlled Flux Intensities |
|
7 |
M.G. Tkachman, T.V.
Shubina, V.N. Jmerik, S.V. Ivanov, T. Paskova, B. Monemar Phonon-Assisted Rediative Recombination of Exitons in GaN Grown by MBE
and HVPE |
|
8 |
S.P. Lepkowski, T.
Suski, P. Perlin, V.Yu. Ivanov, M. Godlewski, N. Grandjean, J. Massies Free-Carrier Screening of Polarization Fields in Wurtzite
AlGaN/GaN Quantum Heterostructures
|
|
9 |
L.H. Dmowski, M. Baj, T. Suski, U. Karrer, O. Ambacher Influence of Pressure and Crystal Polarity on the Properties of GaN/Pt
Schottky Diodes |
|
10 |
M. Bissiri, V.
Gaspari, G. Baldassarri H. v. H., F. Ranalli, A. Polimeni, M. Capizzi, A.
Nucara, M. Geddo, M. Fischer, M. Reinhardt, A. Forchel Effect of Hydrogen on the Electronic Properties of GaAs1-xNx
Heterostructures: from the Impurity to the Alloy Limit |
|
11 |
E. Kaminska, A. Piotrowska, A. Kudla, A. Barcz, M. Zielinski, E. Dynowska, K. Golaszewska, M. Guziewicz Development of a Heterojunction Ohmic Contact to p-GaN
|
|
12 |
K. Kazlauskas, G. Tamulaitis, A. Žukauskas, P. Prystawko, M. Leszczynski, T. Suski, P. Perlin Simultaneous Light Amplification due to Electron-Hole Plasma and Dense
Exciton System in Photoexcited Homoepitaxial GaN |
|
13 |
V.G. Deibuk, Yu.G.
Korolyuk Thermodynamic Stability of Ge1-xSnx Alloys |
|
14 |
Yu. Kozyrev, V. Ogenko, S. Plyatsko, M. Rubezhanska, T. Piotrowski Epitaxial Growth Parameter Influence on Strain Level in Si-Si1-xGex
Structures |
|
15 |
E. Guziewicz, M. Godlewski, A. Szczerbakow, M.M. Godlewski, M.R. Phillips Origin of Red Photoluminescence in Thin Films of ZnSe Grown by Atomics
Layer Epitaxy |
|
16 |
L.A. Karachevtseva,
O.A. Lytvynenko, O.J. Stronska Macroporous Silicon: Light Emission and Sensor Characteristics |
|
17 |
Le Van Khoi, K.
Dybko, J. Kossut, R.R. Galazka Annealing-Induced Reduction in Degree of Compensation of Phosphours
Doped Zn1-xMnxTe |
|
18 |
A.S. Gurevich, V.P.
Kochereshko, A.V. Platonov, D.R. Yakovlev, W. Ossau, A. Waag, G. Landwehr Natural In-Plane Optical Anisotropy of ZnSe/BeTe Superlattices with
No-Common Atom at the Interfaces |
|
19 |
A.P. Krokhmal', Z.Z.
Yanchuk Fano Antiresonances in Exciton Absorption Spectra of Monoclinic Zinc
Diphosphide |
|
20 |
V. Rakovics, J.
Balázs, B. Pödör, A.L. Tóth, Zs.E. Horváth Optical Properties of InxGa1-xAsySb1-y
on GaSb |
|
21 |
B.A. Orlowski, S.
Mickievicius, B.J. Kowalski, A.J. Nadolny, B. Taliashvili, Ghijsen, F.
Mirabell, R.L. Johnson X-Ray and Ultraviolet Photoemission Study of Electronic Structure of
Snl-xMnxTe MBE Layers |
|
22 |
A.J. Nadolny, B. Taliashvili, E. Lusakowska, W. Dobrowolski, V. Domukhovski, V. Osinniy MBE Growth of High Quality PbTe and Pb1-xMnxTe
Layers and Investigations of their Properties |
|
23 |
P. Kaczor, LeVan
Khoi Infrared Spectroscopy of Phosphorus Doped ZnMnTe
|
|
24 |
G. Gawlik, A. Kozlowski, J.M. Baranowski, M. Wojdak Emission of Light from Silicon Implanted SiO2 |
|
25 |
O.V. Nekrutkina, V.S. Sorokin, V.A. Kaygorodov, T.V. Shubina, A.A. Toropov, S.V.
Ivanov, P.S. Kop'ev, A. Waag, G. Landwehr Optical and Structural Properties of BeCdSe Alloys in Quasi-Stability
Regions |
|
26 |
A.N. Semenov, V.A.
Solov'ev, B.Ya. Mel'tser, V.S. Sorokin, S.V. Ivanov Group V Composition Control in Molecular Beam Epitaxy of AlGaAsSb
Alloys |
|
27 |
M.I. Kolinko, O.V.
Bovgyra, A.H. Nevidomskyy X-Ray Photoelectron Spectra, Density of States and Charge Density
Distribution of InBr
|
|
28 |
M. Schnajder, K.Z.
Rushchanskii, H. Haeuseler, D.M. Bercha Zak’s Elementary Energy Bands in ab initio Calculations of
Low-Symmetrical Crystal Band Structures |
|
29 |
S.A. Vitusevich, A. Főrster, H. Lüth, A.E. Belyaev, S.V. Danylyuk, R.V. Konakova, D.I.
Sheka Electric-Field-Induced Superlattices |
|
30 |
J. Grym, O.
Proházková, J. Zavadil, K. Žd'ánský The Comparision of the Influence of Pr, Nd and Tb on the Characteristics
of InP Epitaxial Layers |
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