Group of Physics and Technology of Epitaxial Layers

Institute of Physics of the Polish Academy of Sciences

Experimental setups and technological facilities

  • Experimental setups (2) for magnetotransport studies (electrical conductivity, Hall effect, magnetoresistance) in the temperature range T=2..800 K and magnetic fields up to B=0.7 T (dc and ac methods).
  • Experimental setups for the measurements of Seebeck effect and thermoelectric figure of merit parameter ZT (by Harman method) in the temperature range T=10..300 K and T=300..700 K.
  • Optical setup equipped with continuous flow cryostat (T=3..300 K) for photoluminescence studies of semiconductors in the infrared (λ=2..8 μm) and visible (λ=0.4..1 μm) spectral range with the excitation by pulsed YAG:Nd laser.
  • Superconducting magnetometer (home built with Cryogenics SQUID sensor) for magnetic moment measurements in the temperature range T=2..300 K and magnetic field up to B=0.3 T.
  • Magneto-optical Kerr magnetometer (MOKE) for optical magnetic measurements in the temperature range T=2..300 K and magnetic field up to B=0.2 T.
  • Laue X-ray diffractometer equipped with goniometric head for precision crystallographic orientation of monocrystals.
  • Technological MBE facility (home built) for the growth of epitaxial layers and heterostructures of IV-VI and II-VI semiconductors equipped with 7 effusion cells (PbTe, CdTe, GeTe, Mn, Eu, Bi, Te).
  • Technological facility for the growth of IV-VI and II-VI semiconductor crystals by the Bridgman method.
  • Technological facilities (2) for the growth of IV-VI and II-VI semiconductor monocrystals by the original method of self-selecting vapor growth (SSVG).
  • Technological furnaces (2) for chemical synthesis and annealing of crystals.