Group of Physics and Technology of Epitaxial Layers
Institute of Physics of the Polish Academy of Sciences
Experimental setups and technological facilities
Experimental setups (2) for magnetotransport studies (electrical conductivity, Hall effect, magnetoresistance) in the temperature range T=2..800 K and magnetic fields up to B=0.7 T (dc and ac methods).
Experimental setups for the measurements of Seebeck effect and thermoelectric figure of merit parameter ZT (by Harman method) in the temperature range T=10..300 K and T=300..700 K.
Optical setup equipped with continuous flow cryostat (T=3..300 K) for photoluminescence studies of semiconductors in the infrared (λ=2..8 μm) and visible (λ=0.4..1 μm) spectral range with the excitation by pulsed YAG:Nd laser.
Superconducting magnetometer (home built with Cryogenics SQUID sensor) for magnetic moment measurements in the temperature range T=2..300 K and magnetic field up to B=0.3 T.
Magneto-optical Kerr magnetometer (MOKE) for optical magnetic measurements in the temperature range T=2..300 K and magnetic field up to B=0.2 T.
Laue X-ray diffractometer equipped with goniometric head for precision crystallographic orientation of monocrystals.
Technological MBE facility (home built) for the growth of epitaxial layers and heterostructures of IV-VI and II-VI semiconductors equipped with 7 effusion cells (PbTe, CdTe, GeTe, Mn, Eu, Bi, Te).
Technological facility for the growth of IV-VI and II-VI semiconductor crystals by the Bridgman method.
Technological facilities (2) for the growth of IV-VI and II-VI semiconductor monocrystals by the original method of self-selecting vapor growth (SSVG).
Technological furnaces (2) for chemical synthesis and annealing of crystals.