Sunday, September 6

                         Arrival of participants, registration
From 18:00        dinner and welcoming glass of wine

Monday, September 7

 8:00                  breakfast
  Morning session:
  9:05 -  9:20  Opening address
  9:20 - 10:00 H. P. Strunk, Erlangen, Germany "Relaxation of misfit-induced strain in semiconductor heterostructures"
10:00 - 10:40 E. A. Fitzgerald, Cambridge, USA "Dislocations in relaxed SiGe/Si heterostructures"
10:40 - 11:10      coffee break
11:10 - 11:50 V. I. Vdovin, Moscow, Russia "Misfit dislocations in epitaxial heterostructures: mechanisms of generation and multiplication"
11:50 - 12:30 B. Pichaud, Marseille, France "Dislocation mechanisms involved in the relaxation of heteroepitaxial semiconducting systems"
12:30 - 12:50 J. Katcki, Warsaw, Poland "Formation of dislocations in InGaAs/GaAs heterostructures"
13:00                  lunch
  Afternoon session:
17:00 - 17:40 T. Wosinski, Warsaw, Poland "Quantum interference at misfit dislocations in III-V heterostructures"
17:40 - 18:20 V. V. Kveder, Chernogolovka, Russia "Electronic properties of regular dislocations in silicon"
18:20 - 18:40 S. Mil'shtein, Lowell, USA "Crystalline defects as enhancement and limits to microminiaturization"
  Evening:
19:00                 Get together at the bonfire

Tuesday, September 8

  8:00                 breakfast
   Morning session:
  9:00 - 9:40 R. Hull, Charlottesville, USA "Interactions of moving dislocations in semiconductors with point, line and planar defects"
  9:40 - 10:20 K. Sumino, Sendai, Japan "Impurity reaction with dislocations in semiconductors"
10:20 - 10:50       coffee break
10:50 - 11:30 S. Pizzini, Milan, Italy "Chemistry and physics of segregation of impurities at extended defects in silicon"
11:30 - 12:10 M. Seibt, Göttingen, Germany "Structural and electrical properties of metal silicide precipitates in silicon"
12:10 - 12:30 P. Alippi, Milan, Italy "From point to extended self-interstitials in silicon: a tight-binding molecular dynamics study"
12:30                  lunch
   Afternoon:     Mountains hiking
18:00                  dinner
     Evening session:
19:00 - 19:40 A. George, Nancy, France "Dislocation nucleation and multiplication at crack tips in silicon"
19:40 - 20:20 L. I. Fedina, Novosibirsk, Russia "Extended defects formation in Si crystals at clustering of intrinsic point defects studied by High Resolution Electron Microscopy"
20:30 - 22:00       POSTER SESSION

Wednesday, September 9

  8:00                 breakfast
   Morning session:
  9:00 - 9:40 H. Alexander, Cologne, Germany "Kinks on partials of 60-dislocations in silicon as revealed by a new TEM-technique"
  9:40 - 10:20 Yu. L. Iunin & V. I. Nikitenko, Chernogolovka, Russia "Dislocation kink dynamics in crystals with deep Peierls potential relief"
10:20 - 10:50      coffee break
10:50 - 11:30 Y. Yamashita, Okayama, Japan  "Hydrogen enhanced dislocation glides in silicon"
11:30 - 12:10 V. V. Bulatov, Cambridge, USA "Dislocation mobility in Si: from atomic core to micron scale"
12:10 - 12:30 I. Yonenaga, Sendai, Japan "Recombination-enhanced dislocation motion in SiGe and Ge"
12:30                 lunch
   Afternoon:
13:30 - 19:00      Sightseeing tour
   Evening:
20:00                 Conference dinner

Thursday, September 10

  8:30                breakfast
   Morning session:
  9:30 - 10:10 T. Suski, Warsaw, Poland "Growth and properties of bulk single crystals of GaN; role of defects"
10:10 - 10:50 Z. Liliental-Weber, Berkeley, USA "Extended defects in GaN"
10:50 - 11:20      coffee break
11:20 - 12:00 J.-L. Rouviere, Grenoble, France "Structural characterization of extended defects in GaN epilayers and AlN/GaN heterostructures by transmission Electron Microscopy"
12:00 - 12:40 G. Salviati, Parma, Italy "CL and TEM study of optically active defects in epitaxial GaN"
13:00                 lunch
   Afternoon session:
17:00 - 17:40 R. Jones, Exeter, UK "The interaction of oxygen with dislocations in GaN"
17:40 - 18:00 P. Pirouz, Cleveland, USA "Deformation of single crystal 4H- and 6H-SiC"
18:00                dinner
   Evening session:
19:00 - 20:30 PANEL DISCUSSION, animated by E. R. Weber, Berkeley, USA on: "The role of dislocations and other extended defects in GaN"
20:30 - 22:00     POSTER SESSION

Friday, September 11

  8:00                breakfast
   Morning session:
  9:00 - 9:40 H.-J. Möller, Freiberg, Germany "Oxygen and carbon precipitation in multicrystalline solar silicon"
9:40 - 10:20 T. V. Torchinskaya, Kiev, Ukraine "Recombination-enhanced microprecipitate formation in LPE GaAs structures"
10:20 - 10:50      coffee break
10:50 - 11:10 H. S. Leipner, Halle, Germany "Positron annihilation at dislocations and related point defects in semiconductors"
11:10 - 11:30 E. A. Steinman, Chernogolovka, Russia "The relation between misfit dislocation structure and PL in Si1-xGex /Si (100) heterostructures"
11:30 - 11:50     Closing of EDS'98
12:30                lunch