The tentative list of papers to be published in the Proceedings of EDS'98 is
written below:

1. Dislocation dynamics and crystal plasticity

1. H. Alexander, H. Kolar and J.C.H. Spence "Kinks on partials of 60 deg. dislocations in silicon as revealed by a novel TEM technique"
2. Yu.L. Iunin and V.I. Nikitenko "Dislocation kink dynamics in crystals with deep Peierls potential relief"
3. Y. Yamashita, F. Jyobe, Y. Kamiura and K. Maeda "Hydrogen enhanced dislocation glides in silicon"
4. I. Yonenaga, M. Werner, M. Bartsch, U. Messerschmidt and E.R. Weber "Recombination-enhanced dislocation motion in SiGe and Ge"
5. I. Yonenaga "Dislocation velocities and mechanical strength of bulk GeSi crystals"
6. T. Suzuki, T. Yasutomi, T. Tokuoka and I. Yonenaga "Plasticity of III-V compounds at low temperatures"
7. I. Yonenaga, S.-H. Lim, D. Shindo, P.D. Brown and C.J. Humphreys "Structure and climb of faulted dipoles in GaAs"
8. S. Branchu, F. Pailloux, H. Garem, J. Rabier and J.L. Demenet "Partial dislocation source in InSb: a new mechanism"
9. C. Scandian, H. Azzouzi, N. Maloufi, G. Michot and A. George "Dislocation nucleation and multiplication at crack tips in silicon"
10. C. Levade and G. Vanderschaeve "Rosette microstructure in indented (001) GaAs single crystals and the alpha/beta asymmetry"
11. J. Schreiber, L. Hoering, K. Uniewski, S. Hildebrandt and H.S. Leipner "Recognition and distribution of A(g) and B(g) dislocations in indentation deformation zones on {111} and {110} surfaces of CdTe"
12. S. Takeuchi and K. Suzuki "Stacking fault energies of tetrahedrally coordinated crystals"
13. M. Lefeld-Sosnowska "Dislocations generated in Si annealed under normal or high pressure"

14. K. Sumino "Impurity reaction with dislocations in semiconductors"
15. S. Pizzini "Chemistry and physics of segregation of impurities at extended defects in silicon"
16. R. Hull, A.E. Stach, R. Tromp, F. Ross and M. Reuter "Interactions of moving dislocations in semiconductors with point, line and planar defects"
17. L. Fedina, A. Gutakovskii, A. Aseev, J. Van Landuyt and J. Vanhellemont "Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in situ electron irradiation in a HREM"
18. A.Yu. Belov, K. Scheerschmidt and U. Goesele "Extended point defect structures at intersections of screw dislocations in Si: molecular dynamics study"
19. R. Jones, J. Elsner, M. Haugk, R. Gutierrez, Th. Frauenheim, M.I. Heggie, S. Oberg and P.R. Briddon "Interaction of oxygen with dislocations in GaN"
20. H.J. Moeller, L. Long, M. Werner and D. Yang "Oxygen and carbon precipitation in multicrystalline solar silicon"
21. A. Misiuk "Effect of stress on creation of defects in annealed Czochralski grown silicon"
22. J. Dzelme, I. Ertsinsh, B. Zapol and A. Misiuk "Structure of oxygen and silicon interstitials in silicon"
23. Deren Yang and Duanlin Que "Influence of dislocations on nitrogen-oxygen complex in silicon"
24. C. Frigeri, A. Carnera, A. Gasparotto, F. Priolo, B. Farboni, A. Camporese and G. Rossetto "Gettering of Fe at the end of range loops in Fe-implanted InP"

25. H.P. Strunk, M. Albrecht, S. Christiansen, W. Dorsch, U. Hoermann, B. Jahnen and T. Remmele "Relaxation of misfit-induced strain in semiconductor heterostructures"
26. E.A. Fitzgerald, M.T. Currie, S.B. Samavedam, T.A. Langdo, G. Taraschi, V. Yang and C.W. Leitz "Dislocations in relaxed SiGe/Si heterostructures"
27. V.I. Vdovin "Misfit dislocations in epitaxial heterostructures: mechanisms of generation and multiplication"
28. B. Pichaud, M. Puerto and N. Burle "Elemental dislocation mechanisms involved in the relaxation of heteroepitaxial semiconducting systems"
29. M. Dornheim and H. Teichler "Atomistic modelling of misfit dislocations for Ge/(001)Si and Ge/(111)Si"
30. J. Katcki, J. Ratajczak, J. Adamczewska, F. Phillipp, N.Y. Jin-Phillipp, K. Reginski and M. Bugajski "Formation of dislocations in InGaAs/GaAs heterostructures"
31. A. Nemcsics, F. Riesz and L. Dobos "Selective electrochemical profiling of threading dislocations in mismatched InGaAs/GaAs heteroepitaxial systems"
32. J. Domagala, J. Bak-Misiuk, J. Adamczewska, Z.R. Zytkiewicz, E. Dynowska, J. Trela, D. Dobosz, E. Janik and M. Leszczynski "Anisotropic misfit strain relaxation in thin epitaxial layers"

33. T. Wosinski, T. Figielski and A. Makosa "Quantum interference at misfit dislocations in semiconductor heterostructures"
34. M. Seibt, H. Hedemann, A.A. Istratov, F. Riedel, A. Sattler and W. Schroeter "Structural and electrical properties of metal silicide precipitates in silicon"
35. Zs.J. Horvath, E. Gombia, D. Pal, Cs. Kovacsics, G. Capannese, I. Pinter, M. Adam, R. Mosca, Vo Van Tuyen and L. Dozsa "Effect of defect bands on the electrical characteristics of irradiated GaAs and Si"
36. J.L. Demenet, V. Tillay and J.F. Barbot "Electrical study of dislocated Si and C faces of n-type 6H-SiC"
37. G. Salviati, M. Albrecht, C. Zanotti-Fregonara, N. Armani, M. Mayer, Y. Shreter, M. Guzzi, K. Vassilevski, V.A. Dmitriev and H.P. Strunk "Cathodoluminescence and Transmission Electron Microscopy study of the influence of crystal defects on optical transitions in GaN"
38. O.V. Feklisova, G. Mariani-Regula, B. Pichaud and E.B. Yakimov "Oxygen effect on electrical and optical properties of dislocations in silicon"
39. A. Cavallini, B. Fraboni, S. Binetti, S. Pizzini, L. Lazzarini and G. Salviati "On the influence of dislocations on the luminescence of Si:Er"
40. A. Fedotov, N. Drozdov, E. Katz, Yu. Ilyashuk, A. Mazanik and A. Ulyashin "Transformation of electrical activity of extended defects in silicon polycrystals under annealing and hydrogen plasma treatment"
41. C. Rotaru, S. Nastase and N. Tomozeiu "Amorphous phase influence on optical band gap of polysilicon"
42. S. Mil'shtein "Dislocations in microelectronics"

43. H.S. Leipner, C.G. Huebner, T.E.M. Staab, M. Haugk and R. Krause-Rehberg "Positron annihilation at dislocations and related point defects in semiconductors"
44. V. Eremenko, N. Abrosimov and A. Fedorov "The origin and properties of the new extended defects revealed by etching in plastically deformed Si and SiGe"
45. D. Klinger, M. Lefeld-Sosnowska, D. Zymierska, J. Auleytner, B. Kozankiewicz and K. Reginski "Study of extended defects structure induced by pulsed laser annealing in implanted silicon crystals"
46. J. Sass, K. Mazur, A. Gladki, A. Turos and F. Eichhorn "Reciprocal space mapping and reflectivity investigations of epi-ready InP substrate"
47. F. Riesz "Makyoh topography for the study of large-area extended defects in semiconductors"