H. Alexander, Cologne, Germany
Kinks on partials of 60-deg. dislocations in silicon as revealed by a new TEM-technique

A. L. Aseev, Novosibirsk, Russia
Extended defects formation in Si crystals at clustering of intrinsic point defects studied by High Resolution Electron Microscopy

V. V. Bulatov, Cambridge, USA
Dislocation mobility in Si: from atomic core to micron scale

E. A. Fitzgerald, Cambridge, USA
Dislocations in relaxed SiGe/Si heterostructures

A. George, Nancy, France
Dislocation nucleation and multiplication at crack tips in silicon

R. Hull, Charlottesville, USA
Interactions of moving dislocations in semiconductors with point, line and planar defects

Yu. L. Iunin & V. I. Nikitenko, Chernogolovka, Russia
Dislocation kink dynamics in crystals with deep Peierls potential relief

R. Jones, Exeter, UK
The interaction of oxygen with dislocations in GaN

V. V. Kveder, Chernogolovka, Russia
Electronic properties of regular dislocations in silicon

N. Lehto, Lulea, Sweden
Interaction of vacancies with partial dislocations in silicon

Z. Liliental-Weber, Berkeley, USA
Extended defects in GaN

K. Maeda, Tokyo, Japan
Direct observation of kink migration of 30-deg. partial dislocations in semiconductors

H. J. Möller, Freiberg, Germany
Oxygen and carbon precipitation in multicrystalline solar silicon

B. Pichaud, Marseille, France
Dislocation mechanisms involved in the relaxation of heteroepitaxial semiconducting systems

S. Pizzini, Milan, Italy
Chemistry and physics of segregation of impurities at extended defects in silicon

J.-L. Rouviere, Grenoble, France
Structural characterization of extended defects in GaN epilayers and AlN/GaN heterostructures by Transmission Electron Microscopy

G. S. Salviati, Parma, Italy
CL and TEM study of optically active defects in GaN and AlGaN epilayers grown on sapphire

M. Seibt, Göttingen, Germany
Structural and electrical properties of metal silicide precipitates in silicon

H. P. Strunk, Erlangen, Germany
Relaxation of misfit-induced strain in semiconductor heterostructures

K. Sumino, Sendai, Japan
Impurity reaction with dislocations in semiconductors

T. Suski, Warsaw, Poland
Growth and properties of bulk single crystals of GaN; role of defects

T. V. Torchinskaya, Kiev, Ukraine
Recombination-enhanced microprecipitate formation in LPE GaAs structures

V. I. Vdovin, Moscow, Russia
Misfit dislocations in epitaxial heterostructures: mechanisms of generation and multiplication

T. Wosinski, Warsaw, Poland
Quantum interference at misfit dislocations in III-V heterostructures

Panel discussion on: The role of dislocations and other extended defects in GaN
animated by E. Weber, Berkeley, USA