MONDAY POSTER SESSION
1. |
N.N. Berchenko, V.V. Bogoboyashchiy, I.I. Izhnin, V.A. Yudenkov Ion beam
milling-induced conversion of conductivity type in p-CdxHg1-xTe:
effect of dopants |
2. |
J. Lusakowski, W. Knap, E. Kaminska, A. Piotrowska Magnetoconductivity
of GaAs transistors as detectors of THz radiation |
3. |
J. Lusakowski EL2 – related
birefringence of SI-GaAs at low temperatures |
4. |
T. Slupinski, E. Zielinska-Rohozinska Structural
order-disorder phase transition in GaAs:Te alloy at doping limit revealed
from x-ray studies |
5. |
N. Gonzalez Szwacki, P. Boguslawski Segregation of
dopants and defects in AlAs/GaAs heterostructures |
6. |
A. Witowski, M.L. Sadowski Unusual far infrared
photoconductivity in n-CdS |
7. |
J. Šoltýs, V. Cambel,
D. Gregušová, R. Kúdela Study of tip-induced
Ti-film oxidation in AFM contact and non-contact mode |
8. |
P. Strichovanec, S.
Hasenohrl, R. Kudela, I. Vavra,J. Soltys, J. Novak TEM and AFM
characterization of multiquantum well structures prepared on patterned GaAs
substrates |
9. |
V.Yu. Ivanov, M.
Godlewski, A. Khachapuridze, S. Yatsunenko, T. Wojtowicz, G. Karczewski,
J.P Bergman, B. Monemar, T. Shamirzaew, K. Zhuravlev, K. Leonardi,
D. Hommel Microwave-induced
delocalization of excitons in ternary compounds of II-VI and III-V
semiconductors |
10. |
O.A. Mironov, M. Myronov, S.A. Ostanin, D.R.
Leadley, V.V. Andrievskii, I.B. Berkutov, Yu.F. Komnik Spin-splitting
effect in high Ge content SiGe modulation-doped heterostructures with 2DHG |
11. |
K. Glukhov, A. Bercha, P. Adamiec The energy states
and boundary conditions in symmetrical and asymmetrical shortperiod
superlattices (GaAs)N/(AlAs)M |
12. |
S. Bednarek, B. Szafran, T. Chwiej, J. Adamowski Electron pairs and excitons
in quasi-one-dimensional nanostructures |
13. |
B. Chwalisz, A. Wysmolek, R. Bozek, K.P. Korona, R. Stepniewski, W. Knap, K. Pakula, J.M. Baranowski, N. Grandjean, J. Massies, P. Prystawko, I. Grzegory Localization effects
in GaN/AlGaN QW - photoluminescence studies |
14. |
K. Surowiecka, B. Chwalisz, A. Wysmolek, M. Potemski, V. Thierry-Mieg Optical properties
of type II GaAs/AlAs double quantum well structure |
15. |
M. Ghali, J. Kossut, E. Janik, M. Guziewicz, J. Wrobel, E. Kaminska CdTe and CdMnTe
quantum well-based photodiodes grown on GaAs substrates by Molecular Beam
Epitaxy |
16. |
M. Szot, K. Karpierz, J.
Kossut, M. Grynberg Effect of visible
illumination and crossed external electric and magnetic fields on
intra-impurity transitions in iodine doped CdTe/Cd1-x MgxTe
quantum well |
17. |
J. Suffczynski, L. Klopotowski, M. Nawrocki, E. Janik Dynamical
equilibrium between X and X+ in CdTe-based quantum wells |
18. |
G.V. Lashkarev,
M.V. Radchenko, P.M. Lytvyn, V.M. Vodopyanov, S.V. Trushkin, A.O. Shtepura,
R. Yakiela Manifestation of the
ferroelectric phase transition and QD growth in IV-VI semiconductors |
19. |
L.D. Moldavskaya,
V.I. Shashkin, M.N. Drozdov, A.V. Antonov, A.N. Yablonsky Infrared lateral photoconductivity
of InGaAs quantum dots: the temperature dependence |
20. |
V. Křápek Calculations of
strain field in quantum dots |
21. |
Y. V. Bludov, A.V.
Kats Plasmon-assisted
resonanse transmission of light through the film with negative, periodically modulated
dielectric constant |
22. |
A. Klauzer-Kruszyna, W. Salejda, M.H. Tyc Polarized light
transmission through quasi-one-dimensional aperiodic photonic structures |
23. |
P. Schillak, G. Czajkowski Optical properties of
polaritons in superlattices for in-plane wave propagation |
24. |
J. Kasprzak, M.
Richard, R. Romestain, R. André, Le Si Dang, J.A. Gaj Stimulation of
polaritons in II-VI semiconductor microcavity |
25. |
H.P.D. Schenk, R. Czernecki, P. Prystawko, K. Krowicki, G. Targowski, M. Leszczynski, S. Grzanka, P. Wisniewski, G. Franssen, T. Suski, P. Perlin, J. Muszalski Microcavity light
emitting diodes grown on GaN bulk crystals by metalorganic vapor phase
epitaxy |
26. |
A. Bercha, P. Adamiec, F. Dybala, R. Bohdan, T. Swietlik, W. Trzeciakowski The effect of
pressure and temperature on AlGaInP and AlGaAs laser diodes |
27. |
P. Trautman, K. Pakula, R. Bozek, J.M. Baranowski Light induced metastable
narrowing of excitonic absorption lines in GaN |
28. |
O.O. Pikaruk, Superradiance in
quantum heterostructures |
29. |
Yu. Krupko, P.
Vašek, P. Svoboda, L. Smrčka, M. Cukr, L. Jansen Magnetotransport in
GaAs/Al0.3Ga0.7As CDQWs: novel aspects of the gate
voltage dependence |
30. |
A. Kauch, K. Byczuk Supercurrent in
quantum wires attached to different superconducting electrodes |
31. |
I. Tralle, W. Pasko On the quantum beats
in mesoscopic loop structures |
32. |
B. Pődör, Gy.
Kovács, G. Reményi, I. G. Savel`ev Quantum and
classical scattering times in two-dimensional electron gas in In0.53Ga0.47As/InP |
33. |
B. Pődör Dependence of the
ionization energy of Zn acceptors in InP on the doping level and compensation |
34. |
S. Hansel, A. Kirste, C.
Puhle, M. Bayir, H.-U. Mueller, M. von Ortenberg, E. Huseynov Infrared detection
of carrier dynamics in indium antimonide in transient magnetic fields |
35. |
N. A. Goncharuk,
Ludvík Smrčka Cyclotron resonance
study of the two-dimensional electron single-layers and double-layers in
tilted magnetic fields |
36. |
M. Gryglas, M. Sakowicz, J. Przybytek, J. Siwiec-Matuszyk, L. Dmowski, M. Baj Characterization of
semiconductor heterostructures by simple capacitance measurements |
TUESDAY POSTER SESSION
1. |
F. Tuomisto, J. Slotte, K.
Saarinen J. Sadowski The role of vacancies in
self-compensation of Ga1-xMnxAs |
2. |
O. Fedorych, Z. Wilamowski, M. Potemski, M. Byszewski, J. Sadowski Magnetic resonance studies of the
origin of ferromagnetism in Ga1-xMnxAs |
3. |
K. Dziatkowski, M. Palczewska, T. Slupinski, H. Munekata, A. Twardowski The anisotropy of ferromagnetic
resonance in GaMnAs |
4. |
C. Hernandez, F. Terki, S. Charar, J. Sadowski, D. Maude, V. Stanciu, P. Svedlindh Magnetic properties of GaMnAs
single layers and GaMnInAs superlattices investigated at low temperature and
high magnetic field |
5. |
J. Sadowski, J. Kanski, P.
Svedlindh, V. Stanciu, J. Z. Domagala, J. Bak-Misiuk, F. Terki, C. Hernandez,
S. Charar, A. Mikkelsen, C. Glover Influence of As antisite defects
on the structural and magnetic properties of GaMnAs |
6. |
I. Kuryliszyn-Kudelska, M. Goiran, J.K. Furdyna, X. Liu, T. Wojtowicz, M. Baran, W. Dobrowolski, J.Z. Domagala, E. Lusakowska, R. Szymczak, J.-M. Broto, H. Rakoto, B. Raquet Magnetic studies of Ga1-xMn
xAs epilayers |
7. |
M. Sawicki, T. Dietl, G. Schmidt,
G.M. Schott, C. Ruester, C. Gould, L.W. Molenkamp Magnetic properties of
nano-patterned (Ga,Mn)As |
8. |
K. Wang, M. Sawicki,
A. Idziaszek, T. Dietl, K.W. Edmonds, R.P. Campion,
B.L. Gallagher, C.T. Foxon Towards high Curie temperatures in
(Ga,Mn)As |
9. |
P. Sankowski, P. Kacman Interlayer coupling in EuS-based
superlattices – dependence on the energy structure of the nonmagnetic layer |
10. |
S. Wrotek, K. Dybko, A. Morawski, A. Makosa, T. Wosinski, T. Figielski, Z. Tkaczyk, E. Lusakowska, T. Story, A.Yu. Sipatov, A. Szczerbakow, K. Grasza, J. Wrobel, W. Palosz Vertical electron transport
through PbS-EuS structures |
11. |
L. Kowalczyk,
M. Chernyshova, A. Szczerbakow, T. Story, A.Yu. Sipatov,
V.V. Volobuev Photoluminescence
of EuS-PbS ferromagnetic structures
|
12. |
C. Jastrzebski, W. Gebicki, S. Podsiadlo, B. Strojek Experimental studies of
magnetotransport in Fe-doped GaN bulk crystals |
13. |
B.A. Orlowski, S. Mickevicius, T.
Story, A.Y. Sipatov, M. Chernyshova, I. Demchenko, R. Medicherla,
W. Drube Electronic structure of EuS layer
buried in PbS studied by means of high energy photoemission spectroscopy |
14. |
B.A. Orlowski, S. Mickevičius, B.J. Kowalski, I.A. Kowalik, A.
Mycielski, R.L. Johnson Photoemission study of the ZnTe
(110) (1x1) surface doped by deposited Mn atoms |
15. |
M. Byszewski, D. Plantier, M.L. Sadowski, M. Potemski, A. Sachrajda, Z. Wilamowski, G. Karczewski Optical studies of Mn2+
spin resonance in CdMnTe quantum wells |
16. |
W. Maslana, P. Kossacki, J. A. Gaj,
D. Ferrand, J. Cibert, M. Bertolini, S. Tatarenko Carrier-induced magnetic ordering
in Cd1-xMnxTe quantum wells with disorder, studied by
time-resolved spectroscopy |
17. |
B. Macieja, K.P. Korona, M. Piersa, A. Witowski, A. Wysmolek, G. Strzelecka, A. Hruban, B. Surma, M. Kaminska, A. Twardowski Formation of Mn-related defect
band in InP |
18. |
N. Romčevic, M. Romčevic, Le Van
Khoi Optical properties of Cd1-xMnxTe1-ySey |
19. |
S. Yatsunenko,
A. Khachapuridze, V.Yu. Ivanov, M. Godlewski,
Le Van Khoi, Z. Golacki, G. Karczewski, E.M. Goldys, M.
Phillips Spin dependent interactions of
free carriers and manganese ions in nanostructures of wide band gap II-Mn-VI
semiconductors – mechanism of lifetime reduction |
20. |
E. Placzek-Popko, J. Szatkowski, P. Becla On the negative U of DX center in
Ga-doped Cd1-xMnxTe |
21. |
F.M. Sheregij, J. Cebulski, T.
Kakol, J. Polit,, D. Ploch, LM. Gorbatiuk,
I.M. Rarenko Magnetophonon
spectroscopy of MnxCdyHg1-x.yTe (in
comparison with ZnxCdyHg1-x-yTe) |
22. |
A. Nadolny, B. Taliashvili, E. Lusakowska, W. Dobrowolski, V. Domukhovski, V. Osinniy, P. Dziawa Growth of Pb1-xMnxTe
layers by molecular beam epitaxy and investigations of their properties |
23. |
R. Butkutė,
M. Aleszkiewicz, E. Janik, G. Cywinski, L. Däweritz,
J.-L. Primus, J. de Boeck, J. Kossut Topographical, magnetic and
optical studies of (II,Mn)VI quantum structures grown on (Ga,Mn)As |
24. |
E. Ilczuk, E. Janik, E. Kaminska, E. Dynowska, W. Paszkowicz, J. Kossut Hexagonal MnTe and ZnTe grown on
sapphire by MBE |
25. |
T. Wojtowicz, G. Cywinski, W.L.
Lim, X. Liu, M. Dobrowolska, J.K. Furdyna, K.M. Yu, W. Walukiewicz, G.B. Kim,
M. Cheon, X. Chen, S.M. Wang, H. Luo MBE growth and characterization of
In1-xMnxSb ferromagnetic semiconductor |
26. |
W. Szuszkiewicz,
E. Dynowska, M. Jouanne, J.F. Morhange, M. Kanehisa,
E. Lusakowska, K. Ortner, J. Bak-Misiuk, E. Janik, C.R. Becker Modification of the Néel
temperature of zinc-blende, MBE-grown MnTe layers by the crystal growth
conditions |
27. |
A. Lusakowski, M. Gorska Distance dependence of the Mn-Mn
exchange interaction in IV-VI semimagnetic semiconductors |
28. |
A. Lusakowski, J. Wrobel, T. Dietl Influence of bulk inversion asymmetry on the Datta-Das
transistor |
29. |
J. Mašek, F. Máca Sensibility of exchange coupling
to disorder in III-V diluted magnetic semiconductors |
30. |
M. Zajac, J. Gosk, A. Wolos, M. Palczewska, M. Kaminska, A. Twardowski, M. Bockowski, I. Grzegory, S. Porowski Observation of magnetic anisotropy
in bulk GaMnN:Mg crystals |
31. |
J. Gosk, M. Zajac, M. Palczewska, M. Kaminska, A. Twardowski, M. Drygas, J.F. Janik, R.T. Paine Magnetic and optical properties of
GaMnN nanocrystals obtained by vapor-assisted aerosol synthesis |
32. |
Z. Wilamowski, W. Jantsch D’yakonov-Perel spin relaxation suppressed
by the applied magnetic field |
33. |
M.H. Tyc, W. Salejda Spin-polarized conductance in
aperiodic magnetic superlattices |
34. |
V.K. Dugaev, V.I. Ivanov, J.
Barnas, P.M. Gorley Spin relaxation time in symmetric
quantum wells of III-V semiconductors |
35. |
C. Roder, H. Heinke, D.
Hommel, T.M. Katona, J.S. Speck, S.P. Den-Baars Thermal influence on
crystallographic wing tilt in laterally overgrown GaN |
THURSDAY POSTER SESSION
1. |
H. Teisseire, I. Gorczyca,
F.B. Naranjo, E. Calleja Pressure behavior of
beryllium acceptor level in gallium nitride |
2. |
R. Aleksiejunas, T. Malinauskas, M. Sudzius, K. Jarasiunas Carrier dynamics in
undoped GaN epilayers and Mg doped bulk crystal |
3. |
H. Przybylinska, R. Buczko, G. Kocher, W. Jantsch Magnesium acceptor energy levels in cubic GaN
|
4. |
M. Godlewski,
H. Przybylinska, E.M. Goldys, M. Phillips, T. Böttcher,
S. Figge, D. Hommel Doping related light
emission instabilities in GaN epilayers and in GaN/InGaN quantum well
structures |
5. |
M. Godlewski,
V.Yu. Ivanov, E.M. Goldys, M. Phillips, T. Böttcher,
S. Figge, D. Hommel, R. Czernecki, P. Prystawko,
M. Leszczynski, P. Perlin, I. Grzegory, S. Porowski Cathodoluminescence
profiling of InGaN- based quantum well structures and laser diodes – in-plane
instabilities of light emission |
6. |
J. Plesiewicz, D. Wasik, M. Palczewska, M. Zajac, J. Gosk Oxygen and
hydrogen-related absorption bands in GaN grown by ammonothermal method |
7. |
A.J. Zakrzewski, Effects of electric
and magnetic fields on optical spectra of shallow donors in GaN-based quantum
wells |
8. |
V.Yu. Ivanov,
G. Karczewski, M. Godlewski, A.R. Omelchuk,
Yu.G. Semenov, N.V. Zhavoronkov Role of Auger-type
energy transfer processes in quenching of anti-Stokes emission in chromium
and iron doped wide band gap II-VI compounds: ODMR, optical and time-resolved
study |
9. |
V.Yu. Ivanov,
A.J. Zakrzewski, P. Kaczor, M. Godlewski, A.R. Omel’chuk,
Yu.G. Semenov, A.A. Davydov, N.V. Zhavoronkov Intra-shell
transitions of Cr2+ ions in ZnSe crystals |
10. |
T. P. Surkova, V.
R. Galakhov, M. Godlewski Electronic structure
of ZnS:Co semiconductors: X-ray and optical spectroscopy studies |
11. |
R. Kudrawiec, G. Sek, J. Misiewicz, D. Gollub, A. Forchel Absorption and
recombination processes in (Ga,In)(As,N) compounds and (Ga,In)(As,N)/GaAs
single quantum wells in the dilute-N regime |
12. |
W. Rudno-Rudzinski, R. Kudrawiec, K. Ryczko, G. Sek, J. Misiewicz, D. Gollub, A. Forchel Photoluminescence
and photoreflectance of GaInAsN/GaAs quantum wells with step-like barriers |
13. |
D.M. Bercha, Yu.
Kharkhalis, K.Z. Rushchanskii, M. Sznajder An unique way for
the energy gap to arise in layered In4Se3 crystal and
low-energy nonparabolicity |
14. |
K.P. Korona, A. Wysmolek, J. Kuhl, M. Kaminska, J.M. Baranowski, D.C. Look, S.S. Park Coupling of phonons
with excitons bound to different donors and acceptors in GaN |
15. |
A. Jezowski, B.A. Danilchenko, M. Bockowski, I. Grzegory, S. Krukowski, T. Suski, T. Paszkiewicz Thermal conductivity
of GaN crystals in 4.2-300 K range |
16. |
B.A. Danilchenko, Cz. Jasiukiewicz, T. Paszkiewicz, S. Wolski Nonlinear response of
superconductor bolometer to phonon beams propagating in semiconductor
crystalline substrates |
17. |
J. Polit, E.M.
Sheregii, J. Cebulski, A. Kisiel, A. Mycielski, B.V. Robouch, E.
Burattini, A. Marcelli, M. Cestelli Guidi, P.Calvani, A. Nucara Role of defects in
phonon spectra of the binary zinc-blende compounds |
18. |
Le Van Khoi, J.
Kossut, R.R. Galazka Optical
determination of phosphorus acceptor binding energy in wide-gap II-VI bulk
semimagnetic semiconductors |
19. |
F. Šrobár, I.
Procházková Feedback mechanism
implicit in the LPE growth of semiconductor layers |
20. |
V. Kolkovski, O.
Andersen, L. Dobaczewski, A.R. Peaker, K. Bonde Nielsen Piezospectroscopic
study of the platinum-hydrogen complex in silicon |
21. |
L. Krasil'nikova, M.
Stepikhova, Yu. Drozdov, V. Shengurov, S. Svetlov, V. Chalkov,
D. Pavlov, P. Shilyaev, Z. Krasilnik 3D growth and
luminescent properties of SiGe nanostructures produced by the method of
sublimation MBE in gas atmosphere |
22. |
Zs.J. Horváth, B.
Põdör, J. Balázs, M. Ádám, K. Järrendahl, I. Szabo, Zs. Czigány Correlation between
the optical and electrical behaviour of Si/Ge multilayers and SiGe layers |
23. |
D. Kuritsyn, A.
Kozanecki, B.J. Sealy Studies of clustering
and migration of Er and Yb atoms in silicon-rich silicon oxide |
24. |
V. Glukhanyuk, H. Przybylinska, A. Kozanecki Interstitial Er in GaN |
25. |
L. Bryja, M. Kubisa, K. Ryczko, J. Misiewicz, M. Byszewski, M. Potemski Magnetic field
induced excitons and positively charged excitons in photoluminescence from
heavily modulation doped p-type Ga1-xAlxAs/GaAs single
heterojunction |
26. |
M. Myronov, O.A. Mironov, R.A. Roemer, T.E.
Whall, S. Agan Thermopower and
magnetotransport in p-Si:B/Si1-XGeX/Si and p-Si:B/Si
structures grown by MBE |
27. |
B.A. Orlowski, I.A. Kowalik, B.J. Kowalski, A. Mycielski, S. Colonna, C. Ottaviani, A. Cricenti Franz-Keldish effect
on ZnTe(110) surface by means of Surface Differential Reflectivity method |
28. |
I.E. Lukacs, F. Riesz Analysis of the
errors of Makyoh-topography surface height profile measurements |
29. |
F. Tuomisto,
T. Suski, H. Teisseyre, M. Krysko, M. Leszczynski,
B. Lucznik, I. Grzegory, D. Wasik, A. Witowski, W. Gebicki, P.
Hageman, K. Saarinen Polarity dependent
properties of HVPE-GaN homoepitaxial layers |
30. |
I.A. Kowalik,
B.J. Kowalski, B.A. Orlowski, E. Lusakowska,
S. Mickevičius, R.L. Johnson, I. Grzegory, S. Porowski Synchrotron radiation study of
Mn/GaN |
31. |
K. Pakula, R. Bozek, A. Wysmolek, E. Zielinska-Rohozinska, J.M. Baranowski Reduction of
threading dislocations density in GaN on sapphire by in-situ SixNy
interlayer |
32. |
C. Skierbiszewski, Z. Wasilewski, M. Siekacz, A. Feduniewicz, G. Nowak, H. Teisseyre, K. Dybko, I. Grzegory, S. Porowski Growth of GaN and
GaN/AlGaN on bulk crystals using plasma-assisted molecular beam epitaxy |
33. |
K. Kopalko, A.
Wojcik, E. Lusakowska, W. Paszkowicz, J. Domagala, A. Szczerbakow, M. Godlewski,
M.M. Godlewski, K.S.A. Butcher, E.M. Goldys, M. Phillips Atomic layer epitaxy
of ZnO – growth, structural and optical properties |
34. |
E. Kaminska, A. Piotrowska, T. Piwonski, J. Kossut, E. Ilczuk, E. Janik, R. Butkute, W. Dobrowolski, R. Jakiela, A. Barcz, E. Dynowska, T. Dietl Towards p-type ZnO |
35. |
A. Nemcsics Explanation of etch
pit formation on GaAs (001) surface during electrochemical etching |