Centre of Photon, Electron and Ion Advanced Methods for Natural Science

 

http://info.ifpan.edu.pl/cepheus/

 

Workshop on Advanced Methods for Interpretation of TEM, X-Ray and SIMS Measurement in Nano and Atomic Scale

 

1-3 June 2005

Institute of Physics, Polish Academy of Sciences

Warsaw, Poland

 

PROGRAM

 

1 June

Wednesday

9:00-9:30

Registration

9:30-10:15

K. Scheerschmidt (Max Planck Institute of Microstructure Physics, Halle, Germany)

Molecular dynamics modeling for enhanced interpretation of TEM images PART I

10:15-10:30

Coffee break

10:30-11:15

K. Scheerschmidt (Max Planck Institute of Microstructure Physics, Halle, Germany)

Molecular dynamics modeling for enhanced interpretation of TEM images PART II

11:15-11:45

A. Sanchez (Universidad de Cádiz, Spain)

Plasmon peak in EElS. The beginning of a new technique to determine the strain in semiconductor heterostructures

11:45-12:15

E. Knudsen (Risø National Laboratory, Roskilde, Denmark)

Algorithms and Instrumentation for generating 3D grain maps in polycrystals by 3DXRD PART-I

12:15-13:30

Lunch break

13:30-14:00

E. Knudsen (Risø National Laboratory,  Roskilde, Denmark)

Algorithms and Instrumentation for generating 3D grain maps in polycrystals by 3DXRD PART-II

14:00-14:45

M. Hÿtch (CECM‑CNRS, Vitry-sur-Seine, France)

Geometric phase analysis for measuring strain in nanostructures: challenges and recent advance PART‑I

15:00-17:00

Short orals and training: Individual participants subject choice , discussion panels in small groups

19:00

Barbecue in open air (if the weather is fine) or Get together in the Old Town

 

 

2 June

Thursday

9:30-10:15

M. Hÿtch (CECM‑CNRS, Vitry‑sur‑Seine, France)

Geometric phase analysis for measuring strain in nanostructures: challenges and recent advances PART‑II

10:15-11:00

A. Rosenauer (IFP‑University Bremen, Germany)

Composition evaluation by lattice fringe analysis (CELFA) in semiconductors nanostructures investigation

11:00-11:15

Coffee break

11:15-13:00

Training: Individual participants subject choice

13:00-14:00

Lunch break

14:00-15:00

M. Bersani (Physics and Chemistry of Surface and Interface Division, Povo‑Trento, Italy)

Ultra Shallow Depth Profiling by SIMS in microelectronic materials and processes

15:00-15:45

H. Renevier (CEA, Département de Recherche Fondamentale sur la Matière Condensée SP2M/Nanostructures et Rayonnement Synchrotron, Grenoble, France)

Grazing Incidence Anomalous Diffraction and Diffraction Anomalous Fine Structure (GIDAFS) to study nanostructures PART‑I

15:45-16:00

Coffee break

16:00-16:45

H. Renevier (CEA, Département de Recherche Fondamentale sur la Matière Condensée SP2M/Nanostructures et Rayonnement Synchrotron, Grenoble, France)

Grazing Incidence Anomalous Diffraction and Diffraction Anomalous Fine Structure (GIDAFS) to study nanostructures PART‑II

16:45-17:30

S. Hovmöller (Stockholm University, Sweden)

Computer aided electron crystallography as powerful tool to structure determination PART‑I

17:30-18:00

I. Demchenko (IP PAS, Poland)

EXAFS as a tool for investigation the local environment of Ge atoms in buried low‑dimensional structures

 

 

3 June

Friday

9:00-9:45

S. Hovmöller (Stockholm University, Sweden)

 Computer aided electron crystallography as powerful tool to structure determination PART‑II

9:45-10:30

B. Pałosz (UNIPRESS, Warszawa, Poland)

Diffraction study of nanocrystals under ambient and non-ambient conditions PART‑I

10:30-10:45

Coffee break

10:45-11:30

B. Pałosz (UNIPRESS, Warszawa, Poland)

Diffraction study of nanocrystals under ambient and non-ambient conditions PART‑II

11:30-12:00

P. Galindo (Universidad de Cádiz, Spain)

The Peak Pairs strain mapping algorithm and its application to HRTEM images

12:30-14:00

Lunch break

14:00-15:30

V. Holý (Masaryk University, Czech Republik)

X-ray investigation of self-organized semiconductor nanostructures

15:30-17:00

Discussion panels in small groups and closing remarks