WP 2

 

CONFERENCE FOR EXPERIMENTAL AND COMPUTING METHODS IN HIGH RESOLUTION DIFFRACTION APPLIED FOR STRUCTURE CHARACTERISATION OF

MODERN MATERIALS

 

 

 

International Conference

on

Experimental  and  Computing Methods  in  High  Resolution Diffraction  Applied  for  Structure Characterization  of  Modern Materials

HREDAMM

 

Zakopane, June 13-17, 2004

 

organised by

 

Institute of Physics, Polish Academy

of Science, Warsaw

European  Centre  of  Excellence

”CEPHEUS”

 

INTERNATIONAL ADVISORY BOARD

 

J.    Baruchel                                              (ESRF, Grenoble, France)

A.   Fitch                                                      (ESRF, Grenoble, France)

B.   Hennion                                                (CEA, Saclay, France)

J.    K¹tcki                                                   (IET, Warsaw, Poland)

R.   Köhler                                                  (Humboldt University, Germany)

M.  Lefeld-Sosnowska                              (Warsaw University, Poland)

I.     Sosnowska                                           (Warsaw University, Poland)

 

SCIENTIFIC AND ORGANISING COMMITTEE

 

 

J. Auleytner

 

Honorary Chairman:                       

 

Chairperson:                                                  J.    B¹k-Misiuk

Editor:                                                             K.  £awniczak-Jab³oñska

Secretary:                                                       H.  Granat

                                                                         J.    Gronkowski

                                                                         P.   D³u¿ewski

                                                                         E.   Dynowska

                                                                         S.   Kret

                                                                         M. Leszczyñski

                                                                         W. Paszkowicz

                                                                         J.    Ratajczak

 

LOCAL ORGANISING COMMITTEE

J. D¹browski, Z. Liberadzka, J. Trela

  

LIST OF INVITED LECTURERS

 

Tilo Baumbach, Dresden, Germany,

mm-resolved rocking curve imaging for the characterization of semiconductor materials”

Michela Brunelli, Grenoble, France,

“Solving crystal structures from powder diffraction data exploiting anisotropic thermal expansion phenomenon”

 Marc DeBoissieu, Grenoble, France,

“Diffuse scattering and phason fluctuations in quasicrystals”

Fabia Gozzo, Villigen, Switzerland,

“High-resolution and time-resolved powder diffractometry at the Swiss Light Source”

Jerzy Gronkowski, Warsaw, Poland,

X-ray diffuse scattering from statistically distributed defects”

Jurgen Härtwig, Grenoble, France,

“X-ray diffraction and reciprocal space mapping of protein crystals”

Vaclav Holy, Brno, Czech Republic,

„Lateral coherence mosaicity and dislocations density

at wide-gap semiconductors”

Jung Ho Je, Pohang, Republic of Korea,

“The use of Bragg and Fresnel diffraction synchrotron imaging for studying defects in modern electronic materials“

Vladimir Kaganer, Berlin, Germany,

“How to extract maximum information from X-ray diffraction peaks measured with finite resolution“

Henryk Kêpa, Warsaw, Poland,

“Neutron diffraction and reflectivity studies of Eu chalcogenides based superlattices”

Leszek Kêpiñski, Wroc³aw, Poland,

„Microscopy, diffraction and spectroscopy: complementary methods for structure characterization of nanocrystalline materials”

Vasyl P. Klad’ko, Kiev, Ukraine,

“Application of quasi forbidden reflection for research of multilayer periodic structures”

Michael Knapp, Hamburg, Germany,

“High-resolution powder diffraction”

Jaros³aw Majewski, Los Alamos, USA,

“Synchrotron X-Ray grazing incidence and reflectivity investigation of two-dimensional arrays of semiconductor nano-crystals at air-water interface“

Adam Pietraszko, Wroc³aw, Poland,

„Determination of short-order range using X-ray diffuse scattering”

Ullrich Pietsch, Potsdam, Germany,

„High-resolution diffraction from lateral nanostructures“

Rados³aw Przenios³o, Warsaw, Poland,

„High resolution studies of manganite oxide systems”

Pierre Ruterana, Caen, France,

“Convergent beam electron diffraction study of inversion domain in GaN“

Janusz Sadowski, Lund, Sweden,

“Defects in GaMnAs  X-ray diffraction studies”

Oliver Seeck, Hamburg, Germany,

“Advanced methods to analyze X-ray and neutron reflectivity data”

Zbynek Sourek, Praha, Czech Republic,

“Lateral periodic structure in superlattices”

Wojciech Szuszkiewicz, Warsaw, Poland,

“Neutron scattering studies of Mn-based semiconductors crystals and superlattices”

Marc Willinger, Berlin, Germany,

“Energy loss spectroscopy of inelastically diffracted electrons as a tool for structure investigation“

Peter Zaumseil, Frankfurt (Oder), Germany,

“High resolution XRD characterization of SiGe:C structures for high frequency microelectronics applications

 

 CONFERENCE VENUE

 

Conference was held in Zakopane-winter capital of Poland, at the recreation house BEL-AMI situated at the foot of the Tatra Mountains, in a quiet place, close to the city center.

Participants were lodged in well-equipped single and double rooms and a modern lecture room was available.

Fans of mountaineer’s folklore were fully satisfied with their stay in Zakopane.

 

ABSTRACTS & PROCEEDINGS

 

 

Abstracts were  collected in the Abstracts Boocklet and distributed among participants. 

Selected papers after refereeing procedure will be published, as a special volume, in Journal of Alloys and Compounds.

 

                      Program  of  the  HREDAMM 2004  Conference

Sunday  13th  June

Reception 

Monday  14th  June

 

8:00

Breakfast


9:00

Opening Ceremony

9:15 - 10:00

Vaclav Holy

Diffuse X-ray scattering from relaxed epitaxial layers

10:00 - 10:45

Fabia Gozzo

High-resolution and time-resolved synchrotron radiation powder diffractometry at the Swiss Light Source

10:45 - 11:15

Coffee break

11:15 - 12:00

Ullrich Pietsch

Nanoengineering of lateral strain-modulation in semiconductor quantum well heterostructures by means of X-ray grazing‑incidence diffraction

12:00 - 12:45

Leszek Kepinski

Microscopy, diffraction and spectroscopy: complementary methods for structure characterization of nanocrystalline materials

12:45 - 13:15

Jung Ho Je

Bragg and Fresnel diffraction SR imaging for studying defects in modern electronic materials

13:30

Lunch

14:30

Open-air panel discussion

18:00

Dinner

19:00 - 19:45

Pierre Ruterana

Convergent beam electron diffraction study of inversion domain in GaN

19:45 - 20:10

Radoslaw Przenioslo

High resolution studies of manganite oxide systems

20:30

Poster session

 

Tuesday  15th  June

 

8:00

Breakfast

9:00 - 9:45

Michela Brunelli

Solving crystal structures from powder diffraction data exploiting anisotropic thermal expansion phenomenon

9:45 - 10:30

Jerzy Gronkowski

X-ray diffuse scattering from statistically distributed defects

10:30 - 11:15

Zbynek Sourek

Lateral periodic structure in superlattices

11:15 - 11:45

Coffee break

11:45 - 12:30

Marc Willinger

Energy loss spectra of inelastically diffracted electrons as a tool for structure investigation

12:30 - 13:15

Vladimir Kaganer

How to extract maximum information from X-ray diffraction peaks measured with finite resolution

13:30

Lunch

15:00 - 15:45

Tilo Baumbach

Synchrotron imaging for applied and industrial research – Applications in Microelectronics and in Micro System Technology

15:45 - 16:30

Wojciech Szuszkiewicz

Neutron scattering studies of Mn-based semiconductor crystals and superlattices

16:30 - 17:00

Janusz Sadowski

Defects in GaMnAs X-ray diffraction studies

17:00 - 17:30

Coffee break

17:30 - 19:00

Oral session

17:30 - 17:45

Stanislav Danis

Diffuse X-ray scattering from misfit and threading dislocations in relaxed epitaxial layers

17:45 - 18:00

Edyta Piskorska

Quantitative phase analysis of Ti composites based on the C-BN

18:00 - 18:15

Iraida N. Demtchenko

Structure characterization of Ge layers buried in Si matrix by means of TEM

18:15 - 18:30

Marcin Krysko

The influence of lattice parameter variation on microstructure of single crystals

18:30 - 18:45

Danuta Zymierska

Modification of the nanostructure of the Si-Ge near–surface layer by laser annealing

18:45 - 19:00

Janusz Kozlowski

Structure modelling and reciprocal space maps simulation of the (Ga,Al.)N epitaxial layers deposited on sapphire substrate

20:00

Conference dinner

 

Wednesday  16th  June

 

8:00

Breakfast

9:00 - 9:45

Michael Knapp

High-resolution powder diffraction

9:45 - 10:30

Adam Pietraszko

Determination of short-order range using X-ray diffuse scattering

10:30 - 11:15

Albert Romano-Rodriguez

Characterisation of semiconducting materials, structures and devices using transmission electron microscopy techniques

11:15 - 11:45

Coffee break

11:45 - 12:30

Jurgen Haertwig

The perfection of protein crystals characterised by means of synchrotron multiple-crystal topography and reciprocal space mapping

12:30 - 13:15

Henryk Kepa

Neutron diffraction and reflectivity studies of Eu-chalkogenides based superlattices

13:30

Lunch

14:30

Excursion

Mountain-hiking

19:00

Dinner

20:30

Poster session

 

 

Thursday  17th  June

 

8:00

Breakfast

9:00 - 9:45

Marc DeBoissieu

Diffuse scattering and phasons fluctuations in quasicrystals

9:45 - 10:30

Peter Zaumseil

High-resolution XRD characterization of SiGe:C structures for high frequency microelectronics applications

10:30 - 11:15

Jaros³aw Majewski

Synchrotron X-ray grazing incidence and reflectivity investigation of two-dimensional arrays of semiconductor nano-crystals at air-water interface

11:15 - 11:45

Oral session

11:15 - 11:30

Andrey Minkevich

Eigenwave method for x-ray reflection and diffraction from supperlattice

11:30- 11:45

Sergiy M. Novikov

Simulation of X-ray acoustic –topography on defects in Si crystals

11:45 - 12:30

Vasyl P. Klad`ko

Application of quasi forbidden reflection for research of multilayer periodic structures

12:30

Closing remarks

13:30

Lunch

 

REPORT

 

The International Conference on Experimental and Computing Methods in High Resolution Diffraction Applied for Structure Characterization of Modern Materials, HREDAMM 2004 was organized by the Institute of Physics of the Polish Academy of Sciences, as a part of the European Centre of Excellence “CEPHEUS” activities.

 

Conference was held in Zakopane-winter capital of Poland, at the recreation house BEL-AMI situated at the foot of the Tatra Mountains, in a quiet place, close to the city center.

 

One of the missions of the Centre of Photon, Electron and Ion Advanced Methods for Natural Science “CEPHEUS” is to spread and increase the knowledge of modern techniques foe examination of new materials as well as to perform the research to increase the level of confidence in analysis. These goals gave the strong motivation for the HREDAMM Conference organization.

The Conference program provides an opportunity for scientists to meet together for an efficient scientific exchange on the topic related to different high resolution diffraction methods used for studies of modern materials. The conference addressed all aspects of high resolution diffraction. The topics of meeting included advanced experimental diffraction methods and computer data analysis for characterization of modern materials as well the progress and new achievements in high resolution diffraction (X-ray, electrons and neutrons).

Application of these methods for characterization of modern materials are widely presented among the invited, oral and poster contributions. The HREDAMM conference, in our opinion, stimulated the exchange of ideas between the scientists working in the field of materials characterization by using the diffraction tools.

Selected papers after refereeing procedure will published, as a special volume, in Journal of Alloys and Compounds.

 

During 4 days’ meeting 30 lectures were performed by the invited specialists from all the world, including 15 lecturers from the best European research centers, invited within the European Community Program Centre of Excellence “CEPHEUS”. The topics covered new trends in high-resolution diffraction, computing methods, application to various types of materials like: bulk crystals, nanocrystals, quasicrystals, thin films and heterostructures.

 

Lecturers invited within the the European Program of the Centre of Excellence “CEPHEUS”

 

Tilo Baumbach, Dresden, Germany,

mm-resolved rocking curve imaging for the characterization of semiconductor materials”

Michela Brunelli, Grenoble, France,

“Solving crystal structures from powder diffraction data exploiting anisotropic thermal expansion phenomenon”

Stanislav Danis, Praha, Czech Republic,

„Diffuse X-ray scattering from misfit and threading dislocations in relaxed epitaxial layers”

 Marc DeBoissieu, Grenoble, France,

“Diffuse scattering and phason fluctuations in quasicrystals”

Jurgen Härtwig, Grenoble, France,

“X-ray diffraction and reciprocal space mapping of protein crystals”

Vaclav Holy, Brno, Czech Republic,

„Lateral coherence mosaicity and dislocations density

at wide-gap semiconductors”

Vladimir Kaganer, Berlin, Germany,

“How to extract maximum information from X-ray diffraction peaks measured with finite resolution“

Michael Knapp, Hamburg, Germany,

“High-resolution powder diffraction”

Ullrich Pietsch, Potsdam, Germany,

„High-resolution diffraction from lateral nanostructures“

Pierre Ruterana, Caen, France,

“Convergent beam electron diffraction study of inversion domain in GaN“

Janusz Sadowski, Lund, Sweden,

“Defects in GaMnAs  X-ray diffraction studies”

Oliver Seeck, Hamburg, Germany,

“Advanced methods to analyze X-ray and neutron reflectivity data”

Zbynek Sourek, Praha, Czech Republic,

“Lateral periodic structure in superlattices”

Marc Willinger, Berlin, Germany,

“Energy loss spectroscopy of inelastically diffracted electrons as a tool for structure investigation“

Peter Zaumseil, Frankfurt (Oder), Germany,

“High resolution XRD characterization of SiGe:C structures for high frequency microelectronics applications

 

 

In the conference participated 60 participants from: Poland, Germany, France, Spain, Sweden,  Belarus, Ukraine, Czech Republic, Slovak Republic, USA, Switzerland, Korea.