Journal de Physique
Dingle Temperature in HgSe
T. Dietl
Institute of Physics, Polish Academy of Sciences
al. Lotnikow 32/46, 02-668 Warsaw, Poland
Abstract
The low temperature collision broadening of electron states at the Fermi level (Dingle temperature) is calculated in the first Born aproximation for ionized impurity scattering. The calculations take into account the conduction band nonparabolicity and wave function symmetry of small and zero-gap zinc-blende semiconductors. It is shown that Dingle temperatures in HgSe deduced from the present measurements and from previously reported measurements of the Shubnikov-de Haas effect are in agreement with calculation performed for single-ionized donor scattering.