- Physics of plasma-assisted molecular beam epitaxy (PAMBE) of group-III nitride semiconductor structures
- PAMBE of (AlInGa)N on Si substrates
- Growth of AlGaN/GaN high electron mobility transistor structures
- Physics and technology of nitride semiconductor nanowires for optoelectronic and chemical sensor applications
Head of The Group
prof. dr hab. Zbigniew R. Żytkiewicz
zytkie{a}ifpan.edu.pl (zytkie null@null ifpan NULL.edu NULL.pl)Secretary
mgr Anna Drzazga
adrzazga{a}ifpan.edu.pl (adrzazga null@null ifpan NULL.edu NULL.pl)
+48-22 843 70 01
+48-22 843 66 01
ext. 2911, 3380
fax: +48-22 847 52 23