E-MRS
Fall Meeting 2009
September 14-18, Warsaw Poland
Symposium C
Wide band gap II-VI and
III-V semiconductors
Symposium C will
cover the most important developments in the booming field of the basic and
applied research of wide band gap II-VI and III-V semiconductors. The main
emphasis will be given to the recent progress in growth methods and
understanding of material properties, which allow wide spread applications of
wide band gap semiconductors based on group-III nitrides and ZnO in a new
generation of electronic and optoelectronic devices.
High scientific
interest continues also in another application of wide band gap semiconductors,
such as ZnO and GaN. These materials, when doped with transition metal ions,
often show ferromagnetic response. During the Symposium the recent developments
in this hot topic will also be discussed.
Symposium will cover
the following topics:
- GaN for short and long wavelength LD applications (far UV and
green LDs)
- GaN for electronic applications and biological sensors
- GaN-based LEDs for white light sources
- Perspectives of spintronics based on wide band gap compounds
- Low temperature ZnO for electronic applications
- Growth techniques of wide band gap oxides and material
characterization
- II-VI-based wide band gap semiconductors for optoelectronic and
spintronics applicationsProgramme
List of invited speakers with
tentative titles:
- Dr. T. Aschenbrenner, University of Bremen, Germany - Highly ordered self-organized nitride-based micropillars
grown cathalyst-free
- Dr. R. Butte, Institute
of Quantum Electronics and Photonics, Ecole
Politechnique Federale de Lausanne, Switzerland - Polariton Lasing in
GaN/AlGaN MQW Cavity
- Prof. E. Calleja, Departamento
de Ingeniería Electrónica and ISOM, ETSI Telecomunicación, Universidad Politécnica,
28040 Madrid, Spain - Nitride based
Nanostructures
- Dr. J-M. Chauveau, Centre de
Recherche sur l'HeteroEpitaxie et ses Applications (CRHEA) in Valbonne, France - Elaboration and physical properties of a-plane ZnO layers and nonpolar
quantum wells
- Dr. E. Guziewicz, Institute of Physics, Polish Academy of Sciences, Warsaw, Poland – ZnO grown at low temperature
by ALD for electronic applications
- Doc. A. Hoffmann, TU Berlin,
Germany - Spectroscopy of transition metal ion doped ZnO, GaN
- Dr. R. Kudrawiec, Technical
University of Wrocław, Poland - Application of modulated spectroscopies to
nitride structures
- Prof. M. Leszczyński, Institute
of High Pressure Physics Unipress, Polish Academy of Sciences, Warsaw, Poland – Nitrides lasers after BluRay
- Prof. Y. Nanishi, Department of
Photonics at Ritsumeikan University, Kyoto, Japan - Current status of
GaN-based electronics
- Dr. W. Pacuski, Institute of Experimental Physics, Warsaw University / University of Bremen, Germany - New concepts and developments in ZnTe-based microcavities
- Prof. M. Phillips, UTS, Sydney, Australia – CL characterization of ZnO nanoparticles
- Dr. M. Tchernycheva, Institut
d'Electronique Fondamentale (IEF), Orsay, France - Inter-subband optics at
1.55 micrometers in GaN-based nanostructures - Physics and applications
- Prof. A. Waag, Institute of Semiconductor Technology, Braunschweig University, Germany – Nitrides vs ZnO for
applications
- Prof. T. Wojtowicz, Institute of Physics, Polish Academy of Sciences, Warsaw, Poland - Quantum wires based on wide
band gap II-VI compounds
Proceedings:
Proceedings of the Symposium C
will be published in physica status solidi. Invited and Contributed
Articles will be published in the journal pss (c) - current topics in solid state physics after positive
peer-review. Part of the papers may be assigned as Feature Articles or Original Papers to pss (a) -
applications and materials science or pss (b) - basic solid state physics following a strict double
peer-review process.
Guidelines for Authors:
(
)
Please note that manuscript length in up tp 4 pages (poster and oral contributions)
and up to 6 pages (invited oral contributions).
Organizers:
OrganisersProf Marek Godlewski -
chairman
Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
02-668 Warsaw, Al. Lotników 32/46
Tel: +48
22 843 68 61
Fax: +48
22 847 52 23
E-mail: godlew@ifpan.edu.pl
Prof Detlef Hommel – co-chairman
Institute of Solid State Physics, Bremen University, Germany
Otto-Hahn-Allee NW1, 28359 Bremen
Tel: +49-421-218-2950
Fax: +49-421-218-4581
E-mail: hommel@ifp.uni-bremen.de
Dr Pierre Lefebvre, HDR – co-chairman
Directeur de Recherche - CNRS
Groupe d'Etude des Semiconducteurs
Universite Montpellier II - Case Courrier 074.
F-34095 Montpellier CEDEX 5. FRANCE.
Tel : +33 (0)4 67 14 37 56
Fax : +33 (0)4 67 14 37 60
E-mail : lefebvre@ges.univ-montp2.fr
Prof. Piotr Perlin – co-chairman
Institute of High Pressure Physics
UNIPRESS,
Polish Academy of Sciences, Warsaw, Poland
ul. Sokolowska 29/37; 01-142 Warszawa, Poland
Phone number: +48 22 876 03 12
Fax number: +4822 8760314
E-mail: piotr@unipress.waw.pl
Dr. Adam Zakrzewski – secretary
Address for Correspondence
Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
02-668 Warsaw, Al.
Lotników 32/46
Tel: +48
22 843 68 61
Fax: +48
22 847 52 23
E-mail:
emrs09sympc@ifpan.edu.pl